Part number: IRFP150A
Manufacturer: Inchange Semiconductor
File Size: 233.91KB
Download: 📄 Datasheet
Description: N-Channel MOSFET Transistor
*Drain Current
–ID= 43A@ TC=25℃
*Drain Source Voltage-
: VDSS= 100V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 0.04Ω(Max)
*Fast S.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
100
V
VGS
Gate-Source .
*Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current.
Image gallery
TAGS
📁 Related Datasheet
IRFP150 - (IRFP150 - IRFP153) HIGH VOLTAGE POWER MOSFET DIE
(IXYS Corporation)
.
IRFP150 - N-Channel Power MOSFETs
(Harris)
Semiconductor
July 1998
IRFP150, IRFP151, IRFP152, IRFP153
34A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs
Features
• 34A and.
IRFP150 - N-Channel MOSFET
(STMicroelectronics)
IRFP 150/FI-151/FI IRFP 152/FI-153/FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE
IRFP150 IRFP150FI
IRFP151 IRFP151FI
IRFP152 IRFP152FI
I.
IRFP150 - Power MOSFET
(Vishay)
Power MOSFET
IRFP150, SiHFP150
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 10 V
.
IRFP150 - N-Channel Power MOSFET
(Fairchild Semiconductor)
N ESIG W D CT E N FOR ODU DED UTE PR N E STIT OMM REC LE SUB 150N T O N FP SIB Data IR Sheet POS
S
IRFP150
January 2002
40A, 100V, 0.055 Ohm, N-Cha.
IRFP150 - N-Channel MOSFET
(INCHANGE)
iscN-Channel MOSFET Transistor
IRFP150
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤55mΩ @VGS=10V ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS =.
IRFP150A - Advanced Power MOSFET
(Fairchild Semiconductor)
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
IRFP150FI - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP150FI
FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Vo.
IRFP150M - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IRFP150M,IIRFP150M
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤36mΩ ·Enhancement mode: ·100% avalanche tes.
IRFP150MPBF - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFP150MPBF
Features
·Drain Current –ID= 42A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min).