IRFP150V Datasheet - International Rectifier

IRFP150V HEXFET Power MOSFET

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the des.

IRFP150V Features

* 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X 1.40 (.056) 3X 1.00 (.039) 0.25 (.010) M 3.40 (.133) 3.00 (.118) C A S 0.80 (.031) 3X 0.40 (.016) 2.60 (.102) 2.20 (.087) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN TO-247 package is not recommended for Surface Mount Application. Data an

IRFP150V_InternationalRectifier.pdf