IRFP150N - N-Channel MOSFET Transistor
IRFP150N Features
* Static drain-source on-resistance: RDS(on)≤36mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Fast switching
* Fully Avalanche Rated
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO
