IRFP150NPBF
International Rectifier
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Power mosfet.
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IRFP150N - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
IRFP150N，IIRFP150N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤36mΩ ·Enhancement mode: ·100% avalanche tes.
IRFP150N - N-Channel Power MOSFET
(Fairchild Semiconductor)
IRFP150N
Data Sheet January 2002
44A, 100V, 0.030 Ohm, N-Channel Power MOSFET Packaging
JEDEC TO-247
SOURCE DRAIN GATE
Features
• Ultra Low On-Resis.
IRFP150N - Power MOSFET
(International Rectifier)
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
Description
Fifth Generat.
IRFP150N - Power MOSFET
(ARTS CHIP)
IRFP150N
HEXFET Power MOSFET
FEATURES
z Avalanche Process Technology z Dynamic dv/dt Rating
z 175 Operating Temperature
z Fast Switching z Fully Aval.
IRFP150 - (IRFP150 - IRFP153) HIGH VOLTAGE POWER MOSFET DIE
(IXYS Corporation)
.
IRFP150 - N-Channel Power MOSFETs
(Harris)
Semiconductor
July 1998
IRFP150, IRFP151, IRFP152, IRFP153
34A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs
Features
• 34A and.
IRFP150 - N-Channel MOSFET
(STMicroelectronics)
IRFP 150/FI-151/FI IRFP 152/FI-153/FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE
IRFP150 IRFP150FI
IRFP151 IRFP151FI
IRFP152 IRFP152FI
I.
IRFP150 - Power MOSFET
(Vishay)
Power MOSFET
IRFP150, SiHFP150
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 10 V
.
IRFP150 - N-Channel Power MOSFET
(Fairchild Semiconductor)
N ESIG W D CT E N FOR ODU DED UTE PR N E STIT OMM REC LE SUB 150N T O N FP SIB Data IR Sheet POS
S
IRFP150
January 2002
40A, 100V, 0.055 Ohm, N-Cha.
IRFP150 - N-Channel MOSFET
(INCHANGE)
iscN-Channel MOSFET Transistor
IRFP150
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤55mΩ @VGS=10V ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS =.
