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ASC30N1200MT3 - 1200V N-Channel MOSFET

Description

Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon.

Features

  • High Speed Switching with Low Capacitances.
  • High Blocking Voltage with Low RDS(on).
  • Simple to drive with Standard Gate Drive.
  • 100% avalanche tested.
  • Maximum junction temperature of 150°C.
  • ROHS Compliant.

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Datasheet Details

Part number ASC30N1200MT3
Manufacturer AST
File Size 823.86 KB
Description 1200V N-Channel MOSFET
Datasheet download datasheet ASC30N1200MT3 Datasheet

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Full PDF Text Transcription

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Description V X / Mob:15919711751 ASC30N1200MT3 1200V N-Channel MOSFET Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.
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