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28C64B - Parallel EEPROM

General Description

The AT28C64B is a high-performance electrically-erasable and programmable readonly memory (EEPROM).

Its 64K of memory is organized as 8,192 words by 8 bits.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of just 220 mW.

Key Features

  • Fast Read Access Time.
  • 150 ns.
  • Automatic Page Write Operation.
  • Internal Address and Data Latches for 64 Bytes.
  • Fast Write Cycle Times.
  • Page Write Cycle Time: 10 ms Maximum (Standard) 2 ms Maximum (Option.
  • Ref. AT28HC64BF Datasheet).
  • 1 to 64-byte Page Write Operation.
  • Low Power Dissipation.
  • 40 mA Active Current.
  • 100 µA CMOS Standby Current.
  • Hardware and Software Data Protection.
  • D.

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Other Datasheets by Atmel (Microchip)

Part Number Description
28C64 64K 8K x 8 CMOS E2PROM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times – Page Write Cycle Time: 10 ms Maximum (Standard) 2 ms Maximum (Option – Ref. AT28HC64BF Datasheet) – 1 to 64-byte Page Write Operation • Low Power Dissipation – 40 mA Active Current – 100 µA CMOS Standby Current • Hardware and Software Data Protection • DATA Polling and Toggle Bit for End of Write Detection • High Reliability CMOS Technology – Endurance: 100,000 Cycles – Data Retention: 10 Years • Single 5V ±10% Supply • CMOS and TTL Compatible Inputs and Outputs • JEDEC Approved Byte-wide Pinout • Industrial Temperature Ranges • Green (Pb/Halide-free) Packaging Option Only 1.