28C64B
Catalyst
410.12kb
64k-bit cmos parallel eeprom. The CAT28C64B is a fast, low power, 5V-only CMOS Parallel EEPROM organized as 8K x 8-bits. It requires a simple interface for in-syst
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📁 Related Datasheet
28C64 - 64K 8K x 8 CMOS E2PROM
(ATMEL)
Features
• Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs or 1 ms • Self-timed Byte Write Cycle
– Internal Address and Data Latches – Inter.
28C64 - E2PROM
(Xicor)
X28C64
64K
X28C64
8K x 8 Bit
5 Volt, Byte Alterable E2PROM
FEATURES
• 150ns Access Time • Simple Byte and Page Write
—Single 5V Supply —No Extern.
28C64A - 64K CMOS EEPROM
(Microchip Technology)
Obsolete Device
28C64A
64K (8K x 8) CMOS EEPROM
FEATURES
• Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation
- 30 mA Active -.
28C64A - High Speed CMOS 64K EEPROM
(Turbo IC)
Turbo IC, Inc.
28C64A
HIGH SPEED CMOS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM
FEATURES: • 120 ns Access Time • Automatic Page Wr.
28C64B - Parallel EEPROM
(ATMEL)
Features
• Fast Read Access Time – 150 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times
–.
28C64B - 64K CMOS EEPROM
(Microchip Technology)
Features
• Fast Read Access Time – 150 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times
–.
28C65 - KM28C65
(Samsung semiconductor)
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28C010T - 1 Megabit (128K x 8-Bit) EEPROM
(Maxwell Technologies)
28C010T
1 Megabit (128K x 8-Bit) EEPROM
VCC VSS RES OE CE WE RES A0 Y Decoder Address Buffer and Latch A7 A16 Data Latch Y Gating I/O Buffer and Input.
28C011T - 1-Megabit EEPROM
(ETC)
1 Megabit (128K x 8-Bit) EEPROM
VCC VSS RES OE CE WE RES A0 A6 Address Buffer and Latch Y Decoder Y Gating I/O Buffer and Input Latch Control Logic Ti.
28C011T - 1 Megabit (128K x 8-Bit) EEPROM
(Maxwell Technologies)
28C011T
1 Megabit (128K x 8-Bit) EEPROM
VCC VSS RES OE CE WE RES A0 I/O Buffer and Input Latch Control Logic Timing High Voltage Generator I/O0 I/O7 R.