28C64
ATMEL
234.94kb
64k 8k x 8 cmos e2prom. The AT28C64 is a low-power, high-performance 8,192 words by 8-bit nonvolatile electrically erasable and programmable read only memory
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28C64 - E2PROM
(Xicor)
X28C64
64K
X28C64
8K x 8 Bit
5 Volt, Byte Alterable E2PROM
FEATURES
• 150ns Access Time • Simple Byte and Page Write
—Single 5V Supply —No Extern.
28C64A - 64K CMOS EEPROM
(Microchip Technology)
Obsolete Device
28C64A
64K (8K x 8) CMOS EEPROM
FEATURES
• Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation
- 30 mA Active -.
28C64A - High Speed CMOS 64K EEPROM
(Turbo IC)
Turbo IC, Inc.
28C64A
HIGH SPEED CMOS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM
FEATURES: • 120 ns Access Time • Automatic Page Wr.
28C64B - Parallel EEPROM
(ATMEL)
Features
• Fast Read Access Time – 150 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times
–.
28C64B - 64K-Bit CMOS PARALLEL EEPROM
(Catalyst)
CAT28C64B
64K-Bit CMOS PARALLEL EEPROM
FEATURES
I Fast read access times: – 90/120/150ns
I Low power CMOS dissipation: – Active: 25 mA max. – Standby:.
28C64B - 64K CMOS EEPROM
(Microchip Technology)
Features
• Fast Read Access Time – 150 ns • Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times
–.
28C65 - KM28C65
(Samsung semiconductor)
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28C010T - 1 Megabit (128K x 8-Bit) EEPROM
(Maxwell Technologies)
28C010T
1 Megabit (128K x 8-Bit) EEPROM
VCC VSS RES OE CE WE RES A0 Y Decoder Address Buffer and Latch A7 A16 Data Latch Y Gating I/O Buffer and Input.
28C011T - 1-Megabit EEPROM
(ETC)
1 Megabit (128K x 8-Bit) EEPROM
VCC VSS RES OE CE WE RES A0 A6 Address Buffer and Latch Y Decoder Y Gating I/O Buffer and Input Latch Control Logic Ti.
28C011T - 1 Megabit (128K x 8-Bit) EEPROM
(Maxwell Technologies)
28C011T
1 Megabit (128K x 8-Bit) EEPROM
VCC VSS RES OE CE WE RES A0 I/O Buffer and Input Latch Control Logic Timing High Voltage Generator I/O0 I/O7 R.