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AT49BV004T Key Features

  • 2.7V to 3.6V Read/Write Operation
  • Fast Read Access Time
  • 120 ns
  • Internal Erase/Program Control
  • Sector Architecture
  • One 8K Words (16K bytes) Boot Block with Programming Lockout
  • Two 4K Words (8K bytes) Parameter Blocks
  • One 240K Words (480K bytes) Main Memory Array Block
  • Fast Sector Erase Time
  • 10 seconds

Related Atmel Datasheets

Part Number Description
AT49BV004 4-Megabit (512K x 8/256K x 16) CMOS Flash Memory
AT49BV001 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV001A 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV001AN 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV001ANT 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory

AT49BV004T Description

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67 mW at 2.7V read. When deselected, the CMOS standby current is less than 50 µA.