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AT49BV004T - 4-Megabit (512K x 8/256K x 16) CMOS Flash Memory

This page provides the datasheet information for the AT49BV004T, a member of the AT49BV004 4-Megabit (512K x 8/256K x 16) CMOS Flash Memory family.

Description

The AT49BV004(T) and AT49BV4096A(T) are 3-volt, 4-megabit Flash Memories organized as 524,288 words of 8 bits each or 256K words of 16 bits each.

Features

  • 2.7V to 3.6V Read/Write Operation.
  • Fast Read Access Time - 120 ns.
  • Internal Erase/Program Control.
  • Sector Architecture.
  • One 8K Words (16K bytes) Boot Block with Programming Lockout.
  • Two 4K Words (8K bytes) Parameter Blocks.
  • One 240K Words (480K bytes) Main Memory Array Block.
  • Fast Sector Erase Time - 10 seconds.
  • Byte-by-Byte or Word-By-Word Programming - 30 µs Typical.
  • Hardware Data Protection.
  • DA.

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Full PDF Text Transcription

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Features • 2.7V to 3.6V Read/Write Operation • Fast Read Access Time - 120 ns • Internal Erase/Program Control • Sector Architecture – One 8K Words (16K bytes) Boot Block with Programming Lockout – Two 4K Words (8K bytes) Parameter Blocks – One 240K Words (480K bytes) Main Memory Array Block • Fast Sector Erase Time - 10 seconds • Byte-by-Byte or Word-By-Word Programming - 30 µs Typical • Hardware Data Protection • DATA Polling For End Of Program Detection • Low-Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current • Typical 10,000 Write Cycles Description The AT49BV004(T) and AT49BV4096A(T) are 3-volt, 4-megabit Flash Memories organized as 524,288 words of 8 bits each or 256K words of 16 bits each.
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