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AT49BV2048 - 2-Megabit (128K x 16) 3-volt Only Flash Memory

Description

as 128K words of 16 bits each.

just 67 mW at 2.7V read.

Features

  • Low Voltage Operation.
  • 2.7V Read.
  • 5V Program/Erase.
  • Fast Read Access Time - 120 ns.
  • Internal Erase/Program Control.
  • Sector Architecture.
  • One 8K Words (16K bytes) Boot Block with Programming Lockout.
  • Two 8K Words (16K bytes) Parameter Blocks.
  • One 104K Words (208K bytes) Main Memory Array Block.
  • Fast Sector Erase Time - 10 seconds.
  • Word-By-Word Programming - 10 µs/Word.
  • Hardware Data Protec.

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Full PDF Text Transcription

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Features • Low Voltage Operation – 2.7V Read – 5V Program/Erase • Fast Read Access Time - 120 ns • Internal Erase/Program Control • Sector Architecture – One 8K Words (16K bytes) Boot Block with Programming Lockout – Two 8K Words (16K bytes) Parameter Blocks – One 104K Words (208K bytes) Main Memory Array Block • Fast Sector Erase Time - 10 seconds • Word-By-Word Programming - 10 µs/Word • Hardware Data Protection • DATA Polling For End Of Program Detection • Low Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current • Typical 10,000 Write Cycles Description The AT49BV2048 and AT49LV2048 are 3-volt, 2-megabit Flash Memories organized as 128K words of 16 bits each.
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