AT49BV8011 memory equivalent, 8-megabit (512k x 16/1m x 8) 3-volt only flash memory.
* Single Supply for Read and Write: 2.7V to 3.3V (BV), 3.0V to 3.3V (LV)
* Access Time
– 90 ns
* Sector Erase Architecture
Fourteen 32K Word (.
When RESET is at a logic high level, the device is in its standard operating mode. A low level on the RESET input halts.
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