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AT49BV8011 - 8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory

Description

The AT49BV/LV8011(T) is a 2.7- to 3.3-volt 8-megabit Flash memory organized as 524,288 words of 16 bits each or 1,048,576 bytes of 8 bits each.

The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7.

The memory is divided into 22 sectors for erase operations.

Features

  • Single Supply for Read and Write: 2.7V to 3.3V (BV), 3.0V to 3.3V (LV).
  • Access Time.
  • 90 ns.
  • Sector Erase Architecture Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout Two 16K Word (32K Byte) Sectors with Individual Write Lockout Two 8K Word (16K Byte) Sectors with Individual Write Lockout Four 4K Word (8K Byte) Sectors with Individual Write Lockout Fast Word Program Time.
  • 20 µs Fast Sector Erase Time.
  • 200 ms Dual Plane Orga.

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📁 Similar Datasheet

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Other Datasheets by Atmel (Microchip)

Part Number Description
AT49BV8011T 8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory
AT49BV8192 8-Megabit (512K x 16) CMOS Flash Memory
AT49BV8192A 8-megabit (1M x 8/512K x 16) Flash Memory
AT49BV8192AT 8-megabit (1M x 8/512K x 16) Flash Memory
AT49BV8192T 8-Megabit (512K x 16) CMOS Flash Memory

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www.DataSheet4U.com Features • Single Supply for Read and Write: 2.7V to 3.3V (BV), 3.0V to 3.
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