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AT49F4096 - 4 Megabit 5-volt Only CMOS Flash Memory

General Description

of 16 bits each.

the device offers access times to 90 ns with power dissipation of just 275 mW.

Key Features

  • Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Time - 90 ns.
  • Internal Erase/Program Control.
  • Sector Architecture - One 8K Words (16K bytes) Boot Block with Programming Lockout - Two 8K Words (16K bytes) Parameter Blocks - One 232K Words (464K bytes) Main Memory Array Block Fast Sector Erase Time - 10 seconds.
  • Word-By-Word Programming - 50 µs/Word Hardware Data Protection.
  • DATA Polling For End Of Program Detec.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AT49F4096 Features • Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Time - 90 ns • Internal Erase/Program Control •• Sector Architecture - One 8K Words (16K bytes) Boot Block with Programming Lockout - Two 8K Words (16K bytes) Parameter Blocks - One 232K Words (464K bytes) Main Memory Array Block Fast Sector Erase Time - 10 seconds •• Word-By-Word Programming - 50 µs/Word Hardware Data Protection • DATA Polling For End Of Program Detection •• Low Power Dissipation - 50 mA Active Current - 300 µA CMOS Standby Current • Typical 10,000 Write Cycles Description The AT49F4096 is a 5-volt-only, 4 megabit Flash Memory organized as 256K words of 16 bits each.