SUN12A60F Key Features
- Low drain-source On resistance: RDS(on)=0.55Ω (Typ.)
- Low gate charge: Qg=38nC (Typ.)
- Low reverse transfer capacitance: Crss=15pF (Typ.)
- Lower EMI noise
- RoHS pliant device
- 100% avalanche tested
| Part Number | Description |
|---|---|
| SUN12A65F | New Generation N-Ch Power MOSFET |
| SUN10A60F | New Generation N-Ch Power MOSFET |
| SUN10A60FD | New Generation N-Ch Power MOSFET |
| SUN02A60F | New Generation N-Ch Power MOSFET |
| SUN04A60F | New Generation N-Ch Power MOSFET |