SUN10A60FD Description
SUN10A60FD New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION.
SUN10A60FD Key Features
- Low drain-source On resistance: RDS(on)=0.6Ω (Typ.)
- Low gate charge: Qg=33nC (Typ.)
- Low reverse transfer capacitance: Crss=12.5pF (Typ.)
- Lower EMI noise
- RoHS pliant device
- 100% avalanche tested