SUN12A60F Description
SUN12A60F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION.
SUN12A60F Key Features
- Low drain-source On resistance: RDS(on)=0.55Ω (Typ.)
- Low gate charge: Qg=38nC (Typ.)
- Low reverse transfer capacitance: Crss=15pF (Typ.)
- Lower EMI noise
- RoHS pliant device
- 100% avalanche tested