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SUN10A60F - New Generation N-Ch Power MOSFET

Key Features

  • Low drain-source On resistance: RDS(on)=0.6Ω (Typ. ).
  • Low gate charge: Qg=33nC (Typ. ).
  • Low reverse transfer capacitance: Crss=12.5pF (Typ. ).
  • Lower EMI noise.
  • RoHS compliant device.
  • 100% avalanche tested Ordering Information Part Number Marking Package GDS TO-220F-3L SUN10A60F SUN10A60 TO-220F-3L Marking Information AAUUKK ◎S△UYNΔM10YDADM6.
  • D0D SDB20D45 Column 1: Manufacturer Column 2: Production Information e. g. ) ◎△YMDD.
  • -. ◎: Option Code -.

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Datasheet Details

Part number SUN10A60F
Manufacturer AUK
File Size 472.18 KB
Description New Generation N-Ch Power MOSFET
Datasheet download datasheet SUN10A60F Datasheet

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SUN10A60F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=0.6Ω (Typ.)  Low gate charge: Qg=33nC (Typ.)  Low reverse transfer capacitance: Crss=12.5pF (Typ.)  Lower EMI noise  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package GDS TO-220F-3L SUN10A60F SUN10A60 TO-220F-3L Marking Information AAUUKK ◎S△UYNΔM10YDADM6□D0D SDB20D45 Column 1: Manufacturer Column 2: Production Information e.g.) ◎△YMDD□ -. ◎: Option Code -. △: Factory Management Code -. YMDD: Date Code (Year, Month, Daily) -.