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AT-31011 - High Performance NPN Silicon Bipolar Transistor

Description

Avago’s AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use in battery powered applications in wireless markets.

Features

  • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation.
  • 900 MHz Performance: AT-31011: 0.9 dB NF, 13 dB GA AT-31033: 0.9 dB NF, 11 dB GA.
  • Characterized for End-Of-Life Battery Use (2.7 V).
  • SOT-143 SMT Plastic Package.
  • Tape-And-Reel Packaging Option Available.
  • Lead-free Pin Connections and Package Marking.

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Datasheet Details

Part number AT-31011
Manufacturer AVAGO
File Size 186.40 KB
Description High Performance NPN Silicon Bipolar Transistor
Datasheet download datasheet AT-31011 Datasheet

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Other Datasheets by AVAGO

Part Number Description
AT-31033 High Performance NPN Silicon Bipolar Transistor
AT-30511 High Performance NPN Silicon Bipolar Transistors
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AT-32032 High Performance NPN Silicon Bipolar Transistor

Full PDF Text Transcription

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AT-31011, AT-31033 Low Current, High Performance NPN  Silicon Bipolar Transistor Data Sheet Description Avago’s AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use in battery powered applications in wireless markets. The AT31033 uses the 3 lead SOT‑23, while the AT-31011 places the same die in the higher performance 4 lead SOT‑143. Both packages are industry standards compatible with high volume surface mount assembly techniques. The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a mul­tiplicity of tasks.
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