HSCH-5331 Description
These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift.
HSCH-5331 Key Features
- Platinum tri-metal system High temperature stability
- Silicon nitride passivation Stable, reliable performance
- Low noise figure Guaranteed 7.5 dB at 26 GHz
- High uniformity Tightly controlled process insures uniform RF characteristics
- Rugged construction 4 grams minimum lead pull
- Low capacitance 0.10 pF max. at 0 V
- Polyimide scratch protection