AAT9512 Datasheet | Advanced Analogic Technologies

Description

Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=150 C 1 Units V TA = 25°C TA = 70°C 1 Pulsed Drain Current 2 Continuous Source Current (Source-Drain Diode) Maximum Power Dissipation 1 A TA = 25°C TA = 70°C Operating Junction and Storage Temperature Range W °C Symbol RθJA RθJA2 RθJF Description Typical Junction-to-Ambient steady state Maximum Junction-to-Ambient t<5 seconds Typical Junction-to-Foot 1 1 1 Value 102 78 35 Units °C/W °C/W °C/W 9512.2003.04.0.61 1 28V N-Channel Power MOSFET Symbol Description (TJ=25°C unless otherwise noted) Conditions Min 28 36 57 20 0.6 ±100 1 5 7 5 0.9 1 6 3 30 8 1.6 1.2 48 76 AAT9512 Typ Max Units V mΩ A V nA µA S DC Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250µA VGS=4.5V, ID=4.5A RDS(ON) Drain-Source ON-Resistance 2 VGS=2.5V, ID=3.6A ID(ON) On-State Drain Current 2 VGS=4.5V, VDS=5V (Pulsed) VGS(th) Gate Threshold Voltage VGS=VDS, ID=250µA. IGSS Gate-Body Leakage Current VGS=±12V, VDS=0V VGS=0V, VDS=28V IDSS Drain Source Leakage Current VGS=0V, VDS=23V, TJ=70°C gfs Forward Transconductance 2 VDS=5V, ID=4.5A 3 Dynamic Characteristics QG Total Gate Charge VDS=15V, RD=3.0Ω, VGS=4.5V QGS Gate-Source Charge VDS=15V, RD=3.0Ω, VGS=4.5V QGD Gate-Drain Charge VDS=15V, RD=3.0Ω, VGS=4.5V tD(ON) Turn-ON Delay VDD=15V, VGS=4.5V, RD=3.0Ω, tR Turn-ON Rise Time VDD=15V, VGS=4.5V, RD=3.0Ω, tD(OFF) Turn-OFF Delay VDD=15V, VGS=4.5V, RD=3.0Ω, tF Turn-OFF Fall Time VDD=15V, VGS=4.5V, RD=3.0Ω, Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage 2 VGS=0, IS=4.5A IS Continuous Diode Current 1 nC RG=6Ω RG=6Ω RG=6Ω RG=6Ω ns V A Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1” x 1” PCB with optimized layout.