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AP02N90J-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download the AP02N90J-HF datasheet PDF. This datasheet also covers the AP02N90H-HF variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Note: The manufacturer provides a single datasheet file (AP02N90H-HF-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for AP02N90J-HF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AP02N90J-HF. For precise diagrams, and layout, please refer to the original PDF.

AP02N90H/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristics ▼ RoHS Compliant & Hal...

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On-resistance ▼ Fast Switching Characteristics ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 900V 7.2Ω 1.9A Description S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The through-hole version (AP02N90J) is available for low-profile applications.