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Advanced Power Electronics
Advanced Power Electronics

AP2530GY-HF Datasheet Preview

AP2530GY-HF Datasheet

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP2530GY-HF pdf
Advanced Power
Electronics Corp.
AP2530GY-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Low Gate Charge
Low On-resistance
Surface Mount Package
RoHS Compliant & Halogen-Free
S1
D1
SOT-26
D2
G2
S2
G1
Description
AP2530 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The SOT-26 package is widely used for all commercial-
industrial applications.
N-CH
P-CH
G1
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
G2
S1
30V
72mΩ
3.3A
-30V
150mΩ
-2.3A
D2
S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
30
+20
3.3
2.6
10
1.14
0.01
-30
+20
-2.3
-1.8
-10
V
V
A
A
A
W
W/
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
110
Unit
/W
1
201501215



Advanced Power Electronics
Advanced Power Electronics

AP2530GY-HF Datasheet Preview

AP2530GY-HF Datasheet

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP2530GY-HF pdf
AP2530GY-HF
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=3A
VGS=4.5V, ID=2A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=5V, ID=3A
Drain-Source Leakage Current
VDS=30V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS=+20V, VDS=0V
ID=3A
Gate-Source Charge
VDS=25V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=4.5V
VDS=15V
Rise Time
ID=1A
Turn-off Delay Time
RG=3.3Ω
Fall Time
VGS=10V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
30 - - V
- 0.02 - V/
- - 72 mΩ
- - 125 mΩ
1 - 3V
-4-S
- - 1 uA
- - 25 uA
- - +100 nA
- 3 5 nC
- 1 - nC
- 2 - nC
- 6 - ns
- 8 - ns
- 11 - ns
- 2 - ns
- 170 270 pF
- 50 - pF
- 35 - pF
- 0.5 - Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=0.9A, VGS=0V
IS=3A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 14 - ns
- 7 - nC
2


Part Number AP2530GY-HF
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 8 Pages
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AP2530GY-HF pdf
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