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AP2531GY - N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The SOT-26 package is universally used for all commercial-industrial applications.

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Other Datasheets by Advanced Power Electronics Corp

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AP2531GY-HF N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP2532GY N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP2531GY Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge Drive ▼ Low On-resistance ▼ Surface Mount Package ▼ RoHS Compliant SOT-26 S2 G1 S1 D1 G2 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID P-CH BVDSS RDS(ON) ID 16V 58mΩ 3.5A -16V 125mΩ -2.5A Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial-industrial applications. G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings www.DataSheet.