900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Advanced Power Electronics

AP30N30W Datasheet Preview

AP30N30W Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

Advanced Power
Electronics Corp.
AP30N30W
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
100% Avalanche Test
Simple Drive Requirement
Lower On-resistance
RoHS Compliant
G
D
S
BVDSS
RDS(ON)
ID
Description
AP30N30 from APEC provide the designer with the best combination of fast
switching , low on-resistance and cost-effectiveness .
The TO-3P package is preferred for commercial & industrial applications
with higher power level preclusion than TO-220 device.
GD
S
250V
68mΩ
36A
TO-3P
Absolute Maximum Ratings
www.DataSheet4U.com
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy3
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
250
±30
36
23
144
208
1.7
450
30
-55 to 150
-55 to 150
Max.
Max.
Value
0.6
40
Units
V
V
A
A
A
W
W/
mJ
A
Units
/W
/W
Data and specifications subject to change without notice
200916052-1/4




Advanced Power Electronics

AP30N30W Datasheet Preview

AP30N30W Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP30N30W
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
ΔBVDSS/ΔTj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=15A
VGS(th)
Gate Threshold Voltage
gfs Forward Transconductance
IDSS
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
IGSS Gate-Source Leakage
Qg Total Gate Charge2
Qgs Gate-Source Charge
Qgd Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time2
tr Rise Time
td(off)
Turn-off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
Source-Drain Diode
VDS=VGS, ID=250uA
VDS=10V, ID=15A
VDS=250V, VGS=0V
VDS=200V ,VGS=0V
VGS= ±30V
ID=15A
VDS=200V
VGS=10V
VDS=125V
ID=15A
RG=10Ω,VGS=10V
RD=8.3Ω
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=36A, VGS=0V
IS=15A, VGS=0V
dI/dt=100A/µs
250 - - V
- 0.24 - V/
- - 68 mΩ
1.5 - 3.5 V
- 23 -
S
- - 10 uA
- - 100 uA
- - ±1 uA
- 63 100 nC
- 19 - nC
- 14 - nC
- 28 - ns
- 36 - ns
- 84 - ns
- 45 - ns
- 4290 6900 pF
- 550 - pF
- 6 - pF
- 1.9 3
Min. Typ. Max. Units
- - 1.5 V
- 235 -
ns
- 2.24 - µC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=30A.
2/4


Part Number AP30N30W
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 4 Pages
PDF Download

AP30N30W Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 AP30N30W N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics
2 AP30N30WI N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy