dual n-channel enhancement-mode power mosfet.
G2
S1
D2 D2 D1 D1
SO-8
S2 G2 S2 G1 S1
Absolute Maximum Ratings
Symbol VDS VGS ID at TA=25°C ID at TA=70°C IDM PD at.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The AP4228GM-HF-3 is in the popular SO-8 surface-mount package and is well-suited f.
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