900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Advanced Power Electronics

AP4435 Datasheet Preview

AP4435 Datasheet

30 P-Channel Enhancement-Mode MOSFET

No Preview Available !

30 P-Channel Enhancement-Mode MOSFET
VDS= -30V
RDS(ON), Vgs@-10V, Ids@-9.1A = 21m
RDS(ON), Vgs@-4.5V, Ids@-6.9A = 35m
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
AP4435
Preliminary Data Sheet
S0-8
Internal Schematic Diagram
Drain
Gate
Top View
Source
P-Channel MOSFET
Maximum Ratings and Thermal Characteristics (TA = 25 oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
VGS
ID
Limit
-30
±20
-7
Pulsed Drain Current 1)
Maximum Power Dissipation
TA = 25oC
TA = 75oC
IDM
PD
-50
1.5
0.9
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted) 2)
Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature
2. 1-in2
2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
TJ, Tstg
R JA
-55 to 150
85
Unit
V
A
W
oC
oC/W
July '06 Rev 1




Advanced Power Electronics

AP4435 Datasheet Preview

AP4435 Datasheet

30 P-Channel Enhancement-Mode MOSFET

No Preview Available !

ELECTRICAL CHARACTERISTICS
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Symbol
BVDSS
RDS(on)
RDS(on)
VGS(th)
IDSS
IGSS
gfs
Qg
Qgs
Qgd
td(on) tr
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
td(off) tf
Ciss
Coss
Crss
Max. Diode Forward Current
Diode Forward Voltage
IS
VSD
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
AP4435
Preliminary Data Sheet
P-Channel Enhancement-Mode MOSFET
Test Condition
VGS = 0V, ID = -250uA
VGS = -10V, ID = -9.1A
VGS = -4.5V, ID = -6.9A
VDS =VGS, ID = -250uA
VDS = -30V, VGS = 0V
VGS = ± 20V, VDS = 0V
VDS = -10V, ID = -9.1A
VDS = 20V, ID = 5.7A
VGS = 10V
VDD = 20V, RL=20
ID = 1A, VGEN = 10V
RG = 6
VDS = 8V, VGS = 0V
f = 1.0 MHz
IS = 1.8A, VGS = 0V
Min Typ Max Unit
-30 V
17.0 21.0
23.0 35.0
m
-1 -3 V
-1 uA
±100
nA
24 S
nC
ns
pF
A
V
July '06ev


Part Number AP4435
Description 30 P-Channel Enhancement-Mode MOSFET
Maker Advanced Power Electronics
Total Page 3 Pages
PDF Download

AP4435 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 AP4430GEM N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics
2 AP4430GM-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics
3 AP4430GM-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics
4 AP4432GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics
5 AP4433GH-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics
6 AP4433GI-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics
7 AP4434GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics
8 AP4435 30 P-Channel Enhancement-Mode MOSFET
Advanced Power Electronics
9 AP4435D ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy