AP4511GM-HF mosfet equivalent, n and p-channel enhancement mode power mosfet.
N-CH P-CH
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
D1
35V 25mΩ
7A -35V 40mΩ -6.1A
D2
The SO-8 package is widely preferred .
AP4511 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of po.
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