AP4511GED Overview
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID 40V 28mΩ 6A -40V 42mΩ -5A D1 D2 G1 G2 S1 S2 Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-a Rating N-channel P-channel 40 -40 ±16 ±16 6.0 -5.0 5.0 -4.0 30 -30 2.0 0.016 -55 to 150 -55 to 150 Max.
