AP4511GED Overview
The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. Units - - 1.6 V - 20 - ns - 12 - nC 2/7 AP4511GED P-CH @Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.