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AP4511GH - N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.

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Datasheet Details

Part number AP4511GH
Manufacturer Advanced Power Electronics
File Size 133.01 KB
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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www.DataSheet4U.com AP4511GH Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Good Thermal Performance ▼ Fast Switching Performance S1 G1 D1/D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID P-CH BVDSS RDS(ON) ID 35V 30mΩ 15A -35V 48mΩ -12A S2 G2 Description TO-252-4L The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 35 ±20 15 9 50 10.4 0.
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