AP4511GH-A Overview
Description
S1 G1 S2 G2 D1/D2 TO-252-4L N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID 35V 27mΩ 8.6A -35V 45mΩ -6.7A The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. D1 G1 G2 S1 D2 S2 Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-c Rthj-a Rating N-channel P-channel 35 -35 ±20 ±20 8.6 -6.7 6.9 -5.4 50 -50 3.125 0.025 -55 to 150 -55 to 150 Max.
