Datasheet Details
| Part number | AP4511GED-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 122.15 KB |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP4511GED-HF-AdvancedPowerElectronics.pdf |
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Overview: Advanced Power Electronics Corp. AP4511GED-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Performance ▼ RoHS pliant & Halogen-Free.
| Part number | AP4511GED-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 122.15 KB |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | AP4511GED-HF-AdvancedPowerElectronics.pdf |
|
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Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 G1 G2 40V 28mΩ 6A -40V 42mΩ -5A D2 S1 S2 Absolute Maximum Ratings Symbol Parameter .
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Rating N-channel P-channel 40 -40 +16 +16 6.0 -5.0 5.0 -4.0 30 -30 2.0 0.016 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Thermal Data Symbol Parameter Rthj-a Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 62.5 Unit ℃/W 1 200906014 AP4511GED-HF N-CH Electrical Characteristics@ Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Test Conditions Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Resistance2 VGS=10V, ID=6A VGS=4.5V, ID=4A Gate Threshold Voltage VDS=VGS, ID=250uA Forward Transconductance VDS=10V, ID=6A Drain-Source Leakage Current VDS=40V, VGS=0V Drain-Source Leakage Current (Tj=70oC) VDS=32V, VGS=0V Gate-Source Leakage Total Gate Charge2 VGS=+16V, VDS=0V ID=6A Gate-Source Charge VDS=20V Gate-Drain ("Miller") Charge Turn-on Delay Time2 VGS=4.5V VDS=20V Rise Time ID=6A Turn-off Delay Time Fall Time RG=3Ω,VGS=10V .RD=3.3Ω Input Capaci
| Part Number | Description |
|---|---|
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| AP4511GH-HF | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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