Datasheet4U Logo Datasheet4U.com

AP55T10GH-HF-3 Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

G D S TO-252 (H) The AP55T10GH-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC/DC converters.

Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 100 ±20 56 40 160 125 Units V V A A A W W °C °C Total Power Dissipation Total Power Dissipation 3 2 -55 to 175 -55 to 175 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 1.2 62.5 Units °C/W °C/W Ordering Information AP55T10GH-HF-3TR RoHS-compliant halogen-free TO-252 shipped on tape and reel (3000 pcs/reel) ©2010 Advanced Power Electronics Corp.

Overview

Advanced Power Electronics Corp.

AP55T10GH-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fast Switching Characteristic Lower Gate Charge RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 100V 16.