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Advanced Power Electronics

AP60L02J Datasheet Preview

AP60L02J Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Advanced Power
Electronics Corp.
AP60L02H/J
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
Simple Drive Requirement
D
Fast Switching
G
S
Description
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP60L02J) is available for low-profile applications.
BVDSS
RDS(ON)
ID
25V
12mΩ
50A
G D S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-case
Thermal Resistance Junction-case
Rthj-amb
Thermal Resistance Junction-ambient
G
D
S
Rating
25
± 20
50
32
180
62.5
0.5
-55 to 150
-55 to 150
TO-251(J)
Units
V
V
A
A
A
W
W/
Max.
Max.
Value
2.0
110
Unit
/W
/W
Data & specifications subject to change without notice
200227032




Advanced Power Electronics

AP60L02J Datasheet Preview

AP60L02J Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP60L02H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=25A
VGS=4.5V, ID=20A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=250uA
VDS=10V, ID=25A
VDS=25V, VGS=0V
VDS=20V, VGS=0V
VGS= ± 20V
ID=25A
VDS=20V
VGS=5V
VDS=15V
ID=20A
RG=3.3Ω,VGS=10V
RD=0.75Ω
VGS=0V
VDS=25V
f=1.0MHz
25 -
-V
- 0.037 - V/
- - 12 mΩ
- - 26 mΩ
1 - 3V
- 30 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 21
nC
- 2.8
nC
- 16
nC
- 8 - ns
- 75 - ns
- 22 - ns
- 20 - ns
- 605 - pF
- 415 - pF
- 195 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.26V
Tj=25, IS=50A, VGS=0V
Min. Typ. Max. Units
- - 50 A
- - 180 A
- - 1.26 V
Drain-Source Avalanche Ratings
Symbol
EAS
Parameter
Single Pulse Avalanche Energy2
IAR Avalanche Current
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
Test Conditions
VDD=25V, ID=35A, L=100uH
VGS=10V
Min. Typ. Max. Units
- - 61 mJ
- - 35 A


Part Number AP60L02J
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 6 Pages
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