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AP60N03GJ - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download the AP60N03GJ datasheet PDF. This datasheet also covers the AP60N03GH variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Note: The manufacturer provides a single datasheet file (AP60N03GH-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP60N03GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 13.5mΩ 55A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60N03GJ) is available for low-profile applications.