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Advanced Power Electronics

AP9960GJ Datasheet Preview

AP9960GJ Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Advanced Power
Electronics Corp.
AP9960GH/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low Gate Charge
Fast Switching
G
D
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP9960GJ) are available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
BVDSS
RDS(ON)
ID
40V
16mΩ
42A
GD
S
TO-252(H)
GD
S
Rating
40
±20
42
26
195
45
0.36
-55 to 150
-55 to 150
TO-251(J)
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
2.8
110
Units
/W
/W
Data and specifications subject to change without notice
201007042




Advanced Power Electronics

AP9960GJ Datasheet Preview

AP9960GJ Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP9960GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=20A
VGS=4.5V, ID=18A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=VGS, ID=250uA
VDS=10V, ID=20A
VDS=40V, VGS=0V
VDS=32V ,VGS=0V
VGS= ±20V
ID=20A
VDS=20V
VGS=4.5V
VDS=20V
ID=20A
RG=3.3Ω,VGS=10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=1Ω
VGS=0V
VDS=25V
f=1.0MHz
40 - - V
- 0.032 - V/
- - 16 mΩ
- - 25 mΩ
1 - 3V
- 30 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 18 - nC
- 6 - nC
- 12 - nC
-9-
- 110 -
ns
ns
- 23 - ns
- 10 - ns
- 1500 - pF
- 250 -
- 180 -
pF
pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=45A, VGS=0V
IS=20A, VGS=0V
dI/dt = 100A/us
Min. Typ. Max. Units
- - 1.3 V
- 22 - ns
- 27.4 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.


Part Number AP9960GJ
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
Total Page 4 Pages
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