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0910-60M Advanced Power Technology RF Transistor

Description The 0910-60M is an internally matched, COMMON BASE transistor capable of providing 60 Watts of pulsed RF output power at 150 µs pulse width, 5% duty factor across the band 890 to 1000 MHz. This hermetically solder-sealed transistor is specifically designed for P-Band radar applications. It utilizes gold metallization to provide high reliability. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation...
Features Stability Note 1: Pulse condition of 150µsec, 5%. Freq = 890
  – 1000 MHz Vcc = 40 Volts Pin = 9.5 Watts Pulse Width = 150µs Duty Factor = 5% Bvces Ices Iebo θjc1 Collector to Emitter Breakdown Collector to Emitter Leakage Emitter to Base Leakage Thermal Resistance Ic = 40 mA Vce = 40 Volts Vebo = 3.0 Volts Rated Pulse Condition MIN TYP MAX UN...

Datasheet PDF File 0910-60M Datasheet - 99.43KB

0910-60M  






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