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Advanced Power Technology

APT40M35JVFR Datasheet Preview

APT40M35JVFR Datasheet

POWER MOS V FREDFET

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APT40M35JVFR
400V 93A 0.035
POWER MOS V® FREDFET
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
SS
G D SOT-227
ISOTOP®
"UL Recognized"
www.DataSheet4FUa.csomter Switching
• Avalanche Energy Rated
D
• Lower Leakage
• Popular SOT-227 Package
MAXIMUM RATINGS
FAST RECOVERY BODY DIODE
G
S
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
APT40M35JVFR
400
93
372
±30
±40
700
5.6
-55 to 150
300
93
50
3600
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 46.5A)
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 320V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
400
93
2
0.035
250
1000
±100
4
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
Amps
Ohms
µA
nA
Volts
APT Website - http://www.advancedpower.com




Advanced Power Technology

APT40M35JVFR Datasheet Preview

APT40M35JVFR Datasheet

POWER MOS V FREDFET

No Preview Available !

DYNAMIC CHARACTERISTICS
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge 3
Qgs Gate-Source Charge
Qgd Gate-Drain ("Miller ") Charge
t d(on)
tr
Turn-on Delay Time
Rise Time
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 200V
ID = 93A @ 25°C
VGS = 15V
VDD = 200V
ID = 93A @ 25°C
RG = 0.6
APT40M35JVFR
MIN TYP MAX UNIT
16800 20160
2400 3360 pF
1070 1605
710 1065
80 120 nC
340 510
20 40
30 60 ns
75 115
14 28
www.DataSheeSt4OU.UcoRmCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = - 93A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -93A, di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -93A, di/dt = 100A/µs)
Peak Recovery Current
(IS = -93A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MIN TYP MAX UNIT
93
372
Amps
1.3 Volts
15 V/ns
300
600 ns
2.2
9 µC
16
33 Amps
THERMAL/ PACKAGE CHARACTERISTICS
Symbol Characteristic
MIN
RθJC
RθJA
VIsolation
Torque
Junction to Case
Junction to Ambient
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
2500
Maximum Torque for Device Mounting Screws and Electrical Terminations.
TYP
MAX
0.18
40
10
UNIT
°C/W
Volts
lb•in
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
4 Starting Tj = +25°C, L = 0.83mH, RG = 25, Peak IL = 93A
5 IS ID = 93A, di/dt = 100A/µs, Tj 150°C, RG = 2.0VR = 400V.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.2
0.1
0.05
0.01
0.005
0.001
0.0005
10-5
D=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
Note:
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10


Part Number APT40M35JVFR
Description POWER MOS V FREDFET
Maker Advanced Power Technology
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