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APT40M35PVR
400V 89A 0.035Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
P-Pack
• Faster Switching • Lower Leakage
• 100% Avalanche Tested • New High Power P-Pack Package
G
D
S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
All Ratings: TC = 25°C unless otherwise specified.
APT40M35PVR UNIT Volts Amps
400
1
RY A IN IM
MIN
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
89 356 ±30 ±40 625 5.