APT40M35JVFR Datasheet | Advanced Power Technology

400V 93A 0.035Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. .. - Faster 2 T- "UL Recognized" ISOTOP ® Switching - Avalanche Energy Rated - FAST RECOVERY BODY DIODE - Lower Leakage - Popular SOT-227 Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage All Ratings: TC = 25°C unless otherwise specified. APT40M35JVFR UNIT Volts Amps 400 93 372 ±30 ±40 700 5.6 -55 to 150 300 93 50 4 1 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current Volts Watts W/°C °C Amps m J (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain...