APT40M42JN Datasheet | Advanced Power Technology

2 T- APT40M42JN 400V 86A 0.042Ω "UL Recognized" File No. E145592 (S) ISOTOP® POWER MOS IV ® MAXIMUM RATINGS Symbol VDSS ID IDM, l LM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor SINGLE DIE ISOTOP® PACKAGE All Ratings: TC = 25°C unless otherwise specified. APT 40M42JN UNIT Volts Amps - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 400 86 344 ± 30 690 5.52 -55 to 150 300 and Inductive Current Clamped Volts Watts W/°C °C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, I D = 250 µA) On State Drain Current MIN APT40M42JN UNIT Volts ID(ON) Amps (VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ± 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, I D = 5.0m A) RDS(ON) Ohms IDSS IGSS VGS(TH) 250 1000 ± 100 2 4 µA n A Volts THERMAL CHARACTERISTICS Symbol RΘJC RΘCS Characteristic Junction to Case Case to Sink (Use High Efficiency Thermal Joint pound and Planer Heat Sink Surface.) MIN TYP MAX UNIT °C/W 050-4038 Rev E 0.18 0.05 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be...