Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration.
G1 S1 VBUS 0/VBUS OUT
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Benefits.
Outstanding performance at high frequency operation Direct mounting to heatsink (isola.
Full PDF Text Transcription for APTM100A13D (Reference)
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APTM100A13D. For precise diagrams, and layout, please refer to the original PDF.
APTM100A13D Phase leg with Series diodes MOSFET Power Module VDSS = 1000V RDSon = 130mΩ max @ Tj = 25°C ID = 65A @ Tc = 25°C Application • Zero Current Switching resonant...
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5°C ID = 65A @ Tc = 25°C Application • Zero Current Switching resonant mode Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration • • • G1 S1 VBUS 0/VBUS OUT www.DataSheet4U.
APTM100A13D Datasheet
