Datasheet4U Logo Datasheet4U.com

MS1227 - RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

General Description

The MS1227 is a 12.5V epitaxial NPN planar transistor designed primarily for SSB communications.

This device utilizes emitter ballasting for improved ruggedness and reliability.

Key Features

  • 30 MHz 12.5 VOLTS GOLD.

📥 Download Datasheet

Datasheet Details

Part number MS1227
Manufacturer Advanced Power Technology
File Size 132.10 KB
Description RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Datasheet download datasheet MS1227 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com MS1227 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • 30 MHz 12.5 VOLTS GOLD METALIZATION POUT = 20 W MINIMUM GP = 15 dB COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1227 is a 12.5V epitaxial NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 36 18 4.0 4.5 80 +200 -65 to +150 Unit V V V A W °C °C Thermal Data RTH(J-C) Junction-case Thermal Resistance 2.2 ° C/W MS1227.