HF10-12F transistor equivalent, npn silicon rf power transistor.
* PG = 20 dB min. at 10 W/30 MHz
* IMD3 = -30 dBc max. at 10 W (PEP)
* Omnigold™ Metalization System
F
E B
C D E
C E
Ø.125 NOM. FULL R J .125
MAXIMUM RAT.
The ASI HF10-12F is Designed for
PACKAGE STYLE .380 4L FLG
B .112 x 45° A
FEATURES:
* PG = 20 dB min. at 10 W/30 MHz
* IMD3 = -30 dBc max. at 10 W (PEP)
* Omnigold™ Metalization System
F
E B
C D E
C E
Ø.125 NOM. FULL R J .125
MAXIM.
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