npn silicon rf power transistor.
* PG = 12 dB min. at 100 W/30 MHz
* IMD3 = -30 dBc max. at 100 W (PEP)
* Omnigold™ Metalization System
C B
E H
D G
F K
MAXIMUM RATINGS
IC VCBO VCEO VEBO .
The ASI HF100-12 is Designed for
PACKAGE STYLE .500 4L FLG
.112x45° A FULL R Ø.125 NOM. L
FEATURES:
* PG = 12 dB min. at 100 W/30 MHz
* IMD3 = -30 dBc max. at 100 W (PEP)
* Omnigold™ Metalization System
C B
E H
D G
F K
MAXIMUM RATI.
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