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MRF141 - RF FIELD-EFFECT POWER TRANSISTOR

General Description

The MRF141 is a N-Channel Enhancement-Mode MOSFET RF Power Transistor Designed for 175 MHz 150 W Transmitter and Amplifier Applications.

Ø.125 NOM.

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Datasheet Details

Part number MRF141
Manufacturer Advanced Semiconductor
File Size 84.43 KB
Description RF FIELD-EFFECT POWER TRANSISTOR
Datasheet download datasheet MRF141 Datasheet

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www.DataSheet4U.com MRF141 RF FIELD-EFFECT POWER TRANSISTOR DESCRIPTION: The MRF141 is a N-Channel Enhancement-Mode MOSFET RF Power Transistor Designed for 175 MHz 150 W Transmitter and Amplifier Applications. PACKAGE STYLE .500 4L FLG .112x45° A FULL R L S D Ø.125 NOM. C B G E D G S F K MAXIMUM RATINGS ID VDSS VGS PDISS TJ TSTG θJC 16 A 65 V ±40 V 300 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 0.6 °C/W DIM A B C D E F G H I J K L H I J MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 .980 / 24.89 1.050 / 26.