UT8R512K8 Overview
Standard Products UT8R512K8 512K x 8 SRAM Data Sheet March 2009 .aeroflex./memories.
UT8R512K8 Key Features
- I/O Voltage 3.3 volts, 1.8 volt core Operational environment
- Intrinsic total-dose: 300K rad(Si)
- SEL Immune >100 MeV-cm2/mg
- LETth (0.25): 53.0 MeV-cm2/mg
- Memory Cell Saturated Cross Section 1.67E-7cm2/bit
- Neutron Fluence: 3.0E14n/cm2
- Dose Rate
- Upset 1.0E9 rad(Si)/sec
- Latchup >1.0E11 rad(Si)/sec Packaging options
- 36-lead ceramic flatpack (3.762 grams) Standard Microcircuit Drawing 5962-03235