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UT8R128K32 - 128K x 32 SRAM

Datasheet Summary

Features

  • ‰ 15ns maximum access time ‰ Asynchronous operation, functionally compatible with industry-standard 128K x 32 SRAMs ‰ CMOS compatible inputs and output levels, three-state bidirectional data bus - I/O Voltage 3.3 volts, 1.8 volt core ‰ Operational environment: - Total-dose: 300 Krad(Si) - SEL Immune: >100 MeV-cm2/mg - LETth (0.25): 53.0 MeV-cm2/mg - Memory Cell Saturated Cross Section: 1.67E-7cm2/bit - Neutron Fluence: 3.0E14n/cm2 - Dose Rate - Upset 1.0E9 rad(Si)/sec - Latchup >1.0E11 rad(Si)/s.

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Datasheet Details

Part number UT8R128K32
Manufacturer Aeroflex Circuit Technology
File Size 265.36 KB
Description 128K x 32 SRAM
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Standard Products UT8R128K32 128K x 32 SRAM Data Sheet March 2009 www.aeroflex.com/memories FEATURES ‰ 15ns maximum access time ‰ Asynchronous operation, functionally compatible with industry-standard 128K x 32 SRAMs ‰ CMOS compatible inputs and output levels, three-state bidirectional data bus - I/O Voltage 3.3 volts, 1.8 volt core ‰ Operational environment: - Total-dose: 300 Krad(Si) - SEL Immune: >100 MeV-cm2/mg - LETth (0.25): 53.0 MeV-cm2/mg - Memory Cell Saturated Cross Section: 1.67E-7cm2/bit - Neutron Fluence: 3.0E14n/cm2 - Dose Rate - Upset 1.0E9 rad(Si)/sec - Latchup >1.0E11 rad(Si)/sec ‰ Packaging options: - 68-lead ceramic quad flatpack (6.
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