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Standard Products
UT8R512K8 512K x 8 SRAM
Data Sheet March 2009 www.aeroflex.com/memories
FEATURES 15ns maximum access time Asynchronous operation for compatibility with industry-
standard 512K x 8 SRAMs CMOS compatible inputs and output levels, three-state
bidirectional data bus
- I/O Voltage 3.3 volts, 1.8 volt core Operational environment:
- Intrinsic total-dose: 300K rad(Si)
- SEL Immune >100 MeV-cm2/mg - LETth (0.25): 53.0 MeV-cm2/mg - Memory Cell Saturated Cross Section 1.67E-7cm2/bit - Neutron Fluence: 3.0E14n/cm2
- Dose Rate
- Upset 1.0E9 rad(Si)/sec
- Latchup >1.0E11 rad(Si)/sec Packaging options:
- 36-lead ceramic flatpack (3.
UT8R512K8 Datasheet
