AT-42010 transistor equivalent, up to 6 ghz medium power silicon bipolar transistor.
* High Output Power: 12.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz
* High Gain at 1␣ dB␣ Compression: 14.0 dB Typical G1 dB at 2.0␣ GHz 9..
This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, an.
Hewlett-Packard’s AT-42010 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42010 is housed in a hermetic, high reliability 100 mil ceramic package. The 4 micron emitter-toemitter pitch enables this.
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