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Agilent Technologies

MSA-0520 Datasheet Preview

MSA-0520 Datasheet

Cascadable Silicon Bipolar MMIC Amplifier

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Agilent MSA-0520
Cascadable Silicon Bipolar
MMIC Amplifier
Data Sheet
Description
The MSA-0520 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic,
BeO disk package for good
thermal characteristics. This
MMIC is designed for use as a
general purpose 50 gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in industrial and
military applications.
200 mil BeO Package
Features
Cascadable 50 Gain Block
High Output Power:
+23 dBm Typical P1 dB at
1.0 GHz
Low Distortion:
33 dBm Typical IP3 at 1.0 GHz
8.5 dB Typical Gain at
1.0 GHz
Hermetic Metal/Beryllia
Microstrip Package
Typical Biasing Configuration
The MSA-series is fabricated using
Agilents 10 GHz fT, 25 GHz fMAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
C block
IN
R bias
VCC > 15 V
4
1 MSA
2
3
RFC (Optional)
C block
Vd = 12 V
OUT




Agilent Technologies

MSA-0520 Datasheet Preview

MSA-0520 Datasheet

Cascadable Silicon Bipolar MMIC Amplifier

No Preview Available !

2
MSA-0520 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
225 mA
3.0 W
+25 dBm
200°C
65 to 200°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 40 mW/°C for TC > 125°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods.
Thermal Resistance[2,4]:
θjc = 25°C/W
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 165 mA, ZO = 50
P1 dB
GP
GP
f3 dB
Output Power at 1 dB Gain Compression
Power Gain (|S21| 2)
Gain Flatness
3 dB Bandwidth[2]
f = 1.0 GHz
f = 0.1 GHz
f = 0.1 to 2.0 GHz
VSWR
Input VSWR
Output VSWR
f = 0.1 to 2.0 GHz
f = 0.1 to 2.0 GHz
IP3
NF50
tD
Third Order Intercept Point
50 Noise Figure
Group Delay
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
Vd Device Voltage
dV/dT Device Voltage Temperature Coefficient
Units Min.
dBm
dB
dB
21.0
7.5
GHz
dBm
dB
psec
V
mV/°C
10.5
Typ. Max.
23.0
8.5
±0.75
2.8
2.0:1
2.5:1
33.0
6.5
170
12.0
16.0
9.5
13.5
Notes:
1. The recommended operating current range for this device is 80 to 200 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 0.1 GHz Gain (GP).


Part Number MSA-0520
Description Cascadable Silicon Bipolar MMIC Amplifier
Maker Agilent Technologies
Total Page 4 Pages
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