AM2303 Datasheet | AiT Semiconductor

DESCRIPTION The AM2303 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON) low gate charge and operation gate as 2.5V. FEATURES - - - - -30V/-4.3A, RDS(ON) =50mΩ(typ.)@VGS =-10V -30V/-3.5A, RDS(ON) =58mΩ(typ.)@VGS =-4.5V -30V/-2.5A, RDS(ON) =73mΩ(typ.)@VGS =-2.5V Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and Maximum DC current capability - Available in SOT-23 Package This device is suitable for use as a load switch or other general applications. The AM3401 is available in SOT-23 Package ORDERING INFORMATION Package Type SOT-23 Note E3 Part Number AM2303E3R AM2303E3VR APPLICATIONS - High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA - - DC/DC Converter Load Switch V: Halogen free Package R: Tape & Reel Ai T provides all Ro HS products Suffix “ V “ means Halogen free Package P CHANNEL MOSFET REV1.2 -MAR 2011 RELEASED, JUN 2012 UPDATED - -1- Ai T Semiconductor Inc. .ait-ic. MOSFET -30V P-CHANNEL ENHANCEMENT MODE PIN DESCRIPTION Top View Pin # 1 2 3 Symbol G S D Gate Source Drain Function REV1.2 -MAR 2011 RELEASED, JUN 2012 UPDATED - -2- Ai T Semiconductor Inc. .ait-ic. MOSFET -30V P-CHANNEL ENHANCEMENT MODE ABSOLUTE MAXIMUM RATINGS TA = 25℃, unless otherwise noted VDSS, Drain-Source Voltage VGSS, Gate-Source Voltage ID, Continuous Drain Current , VGS = -10VNOTE1 IDM, Pulsed Drain Current NOTE2 PD, Power Dissipation TJ, Operation Junction Temperature TSTG, Storage Temperature Range TA=25o C TA=70o C Tc=25℃ Tc=70℃ -30V ±12V -4.3A -3.8A -20A 1.25W 0.8W -55℃~150℃ -55℃~150℃ Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods...